Laser Doping Machine

Doping sources pre deposited on the surface of silicon wafer (such as phosphosilicate glass PSG, boron
Silicon glass (BSG, etc.) is reprocessed to remove impurities on the surface or shallow surface of the film
The secondary diffusion in the silicon wafer forms PP + and NN + high-low junctions.

Main Features
532nm green laser, stable and reliable.
The new focusing flat top energy distribution optical path transmission system is designed to effectively improve the optical path stability and minimize the damage of silicon substrate;
Compatible with existing production lines, easy to upgrade and high reliability.

Main Parameters

Event	Technical indicators
Spot shape and size	Flat top square light spot, uniform energy distribution, minimize silicon-based damage, 80 – 140um adjustable
Processing battery	1 56mmx1 56m to 185mmx185m, and 210 m.
Machine capacity	7500 ～8000p/ h@166mm (standard machine); 12000p/ h@166mm (customizable)
Laser life	2000 hours
Fragment rate	≤0 .03%
Slice detection	Pre inspection industrial camera, ≥ 10 million pixels; Optional for post inspection
Graphic accuracy	≤±1 5 u m
positioning accuracy	Positioning deviation
Operation mode	Double track operation, the two tracks are independent of each other and do not interfere with each other
Dust removal and filtration efficiency	The dust removal efficiency is greater than 95%, and the dust filtration efficiency is greater than 99%
Feeding mode	Loading and unloading on both sides / on the same side is optional
Control system	PLC + industrial computer
Interactive interface	LCD display, touch operation, online monitoring, authority management, etc
MES	With MES information interface